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FDT434P |
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| Part Number | FDT434P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain lo... |
| Features |
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surface mount package. D D SOT-22 3 S D G G D S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperatur... |
| Document |
 FDT434P Data Sheet
PDF 226.00KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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