FDMC2610 |
Part Number | FDMC2610 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications. Features • Max RDS(on) = 200 mW at VGS = 10 V, ID = 2... |
Features |
• Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A • Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A • Low Profile − 1 mm Max in a Power 33 • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 200 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous (Silicon limited) TC = 25°C 9.5 Continuous (Note 1a) TA = 25°C 2.2 Pulsed 15 EAS Single Pulse Avalanche Energy (Note 3) 6 mJ PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) W... |
Document |
FDMC2610 Data Sheet
PDF 315.51KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMC2610 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
2 | FDMC2674 |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET | |
3 | FDMC2674 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDMC2512SDC |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDMC2514SDC |
Fairchild Semiconductor |
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6 | FDMC2514SDC |
VBsemi |
N-Channel MOSFET |