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NTBG040N120SC1 |
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| Part Number | NTBG040N120SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60 A Drain (TAB) NTBG040N120SC1 Features • Typ. R... |
| Features |
• Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC-DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS +25/−15 V Recommended Operation Values TC < 175°C VGSop +20/−5 V of Gate−Source Voltage Continuous Drain Cur... |
| Document |
 NTBG040N120SC1 Data Sheet
PDF 325.92KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTBG045N065SC1 |
ON Semiconductor |
SiC MOSFET |
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| 2 | NTBG014N120M3P |
ON Semiconductor |
SiC MOSFET |
|
| 3 | NTBG020N090SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 4 | NTBG020N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 5 | NTBG025N065SC1 |
ON Semiconductor |
SiC MOSFET |
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| 6 | NTBG028N170M1 |
ON Semiconductor |
SiC MOSFET |
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Desde 2024. D4U Semiconductor.
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