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HGTG20N60B3D |
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| Part Number | HGTG20N60B3D |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar t... |
| Features |
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti−parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Formerly developmental type TA49016.
Features
• 40 A, 600 V at TC = 25°C • Typical Fall Time 140 ns at 150°C • Short Circuit Rated • Low Conduction Loss • Hyperfas... |
| Document |
 HGTG20N60B3D Data Sheet
PDF 428.17KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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