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SI2301B |
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| Part Number | SI2301B |
| Manufacturer | UMW |
| Description | UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V 120 mΩ@-4.5V 150 mΩ@-2.5V ID 2.5 A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICA... |
| Features |
b Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS VGS(th) IGSS IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA VDS =VGS, ID =-250µA VDS =0V, VGS =±8V VDS =-20V, VGS =0V VGS =-4.5V, ID =-2.8A VGS =-2.5V, ID =-2.0A VDS =-5V, ID =-2.8A
Ciss
Coss
VDS =-10V,VGS =0V,f =1MHz
Crss
VDS =-10V,VGS =-4.5V,ID =-3A Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2.5V,ID =-3A
... |
| Document |
 SI2301B Data Sheet
PDF 871.71KB |
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