2N6422 INCHANGE Silicon PNP Power Transistor Datasheet. existencias, precio

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2N6422

INCHANGE
2N6422
2N6422 2N6422
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Part Number 2N6422
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB...
Features tage IC= -0.75A; IB=-0.075A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A hFE-1 DC Current Gain IC=-1A; VCE=-2V hFE-2 DC Current Gain IC=-1A; VCE= -10V 2N6422 MIN TYP. MAX UNIT -300 V -500 uA -5 mA -0.75 V -0.75 V -1.4 V -1.4 V 8 80 25 100 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ...

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