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| Part Number | 2N6423 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6423 |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -500 . |
| Features | tage IC= -0.75A; IB=-0.075A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A hFE-1 DC Current Gain IC=-0.75A; VCE=-2V hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 2N6423 MIN TYP. MAX UNIT -300 V -500 uA -5 mA -1 V -1 V -1.8 V -1.. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6420 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 2 | 2N6420 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N6421 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 4 | 2N6421 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 5 | 2N6422 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 6 | 2N6422 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 7 | 2N6424 |
Central Semiconductor |
PNP Silicon Power Transistor |
|
| 8 | 2N6424 |
Seme LAB |
Bipolar PNP Device |
|
| 9 | 2N6425 |
Central Semiconductor |
PNP Silicon Power Transistor |
|
| 10 | 2N6425 |
Seme LAB |
Bipolar PNP Device |
|
Desde 2024. D4U Semiconductor.
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