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STW18NM60N |
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| Part Number | STW18NM60N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 13 A IDM Pulse Drain Current 52 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHA... |
| Document |
 STW18NM60N Data Sheet
PDF 371.36KB |
Similar Datasheet
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| 1 | STW18NM60N |
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| 2 | STW18NM60ND |
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Desde 2024. D4U Semiconductor.
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