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STB11NM60N-1 |
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| Part Number | STB11NM60N-1 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Pulse Drain Current 40 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARA... |
| Document |
 STB11NM60N-1 Data Sheet
PDF 307.72KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB11NM60 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STB11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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