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| Part Number | STB11NM60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | STB11NM60 |
| Manufacturer | ST Microelectronics |
| Title | N-CHANNEL Power MOSFET |
| Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s . |
| Features | ers allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Facto. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB11NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB11NM60-1 |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STB11NM60A-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 4 | STB11NM60FD |
ST Microelectronics |
N-Channel MOSFET |
|
| 5 | STB11NM60FD |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STB11NM60FD-1 |
ST Microelectronics |
N-Channel MOSFET |
|
| 7 | STB11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STB11NM60N-1 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STB11NM60T4 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 10 | STB11NM80 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
Desde 2024. D4U Semiconductor.
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