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IXTH110N10L2 |
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| Part Number | IXTH110N10L2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 600 W Tj Operating Junction Temperature -55~150 ℃ Ts... |
| Document |
 IXTH110N10L2 Data Sheet
PDF 334.51KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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