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IPI111N15N3 |
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| Part Number | IPI111N15N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pulsed 332 A PD Total Dissipation @TC=25℃ 214 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Tem... |
| Document |
 IPI111N15N3 Data Sheet
PDF 282.35KB |
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Desde 2024. D4U Semiconductor.
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