Part Number | IPI110N20N3 |
Distributor | Stock | Price | Buy |
---|
Part Number | IPI110N20N3 |
Manufacturer | Infineon |
Title | Power-Transistor |
Description | IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A • 175 °C operating temperature • Pb-free lead. |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous re. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPI110N20N3G |
Infineon Technologies |
Power Transistor | |
2 | IPI111N15N3 |
Infineon |
Power-Transistor | |
3 | IPI111N15N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPI111N15N3G |
Infineon Technologies |
Power Transistor | |
5 | IPI100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor | |
6 | IPI100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
7 | IPI100N06S3-03 |
Infineon Technologies |
Power-Transistor | |
8 | IPI100N06S3L-03 |
Infineon Technologies |
Power-Transistor | |
9 | IPI100N08N3 |
Infineon |
Power-Transistor | |
10 | IPI100N08N3 |
INCHANGE |
N-Channel MOSFET |