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2N60 |
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| Part Number | 2N60 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor 2N60 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ... |
| Features |
·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 44 W Tj Max. Operating Juncti... |
| Document |
 2N60 Data Sheet
PDF 225.60KB |
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Desde 2024. D4U Semiconductor.
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