logo

2N60 600V N-Channel Power MOSFET Datasheet


2N60

JINAN JINGHENG
2N60
Part Number 2N60
Manufacturer JINAN JINGHENG
Title Bipolar Transistors - BJT Through-Hole Programmable UJT
Description R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance w...
Features
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability,high ruggedness MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 600 4.4 @ VGS =10V TO-220AB 2N60 ITO-220AB 2N60F ID (A) 2 TO-263 2N60D
● Case:TO-220,I...

Document Datasheet 2N60 datasheet pdf (159.42KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 1995 In Stock
Price
1 units: 2.45 USD
10 units: 2.04 USD
100 units: 1.62 USD
250 units: 1.5 USD
500 units: 1.39 USD
2000 units: 1.17 USD
BuyNow BuyNow Buy Now (Manufacturer a Central Semiconductor Corp 2N6028 APM PBFREE)



2N60

nELL
2N60
Part Number 2N60
Manufacturer nELL
Title N-Channel Power MOSFET
Description The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdow.
Features RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB .

Document 2N60 datasheet pdf


2N60

ART CHIP
2N60
Part Number 2N60
Manufacturer ART CHIP
Title N-CHANNEL MOSFET
Description The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resis.
Features * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Pb-free plating product number: 2N60L ORDERING INFORMATION Or.

Document 2N60 datasheet pdf


2N60

PINGWEI
2N60
Part Number 2N60
Manufacturer PINGWEI
Title N-Channel MOSFET
Description 2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% a.
Features
 2A,600V,RDS(ON)=4Ω@VGS=10V/1A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain.

Document 2N60 datasheet pdf


2N60

ROUM
2N60
Part Number 2N60
Manufacturer ROUM
Title 2A 600V N-channel Enhancement Mode Power MOSFET
Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performa.
Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typ:8nC)
● Low Reverse Transfer Capacitances(Typ:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● used in various power switching circuit for system miniaturization and high.

Document 2N60 datasheet pdf


2N60

HAOHAI
2N60
Part Number 2N60
Manufacturer HAOHAI
Title N-Channel MOSFET
Description 2A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 公司型号 通俗命名 H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI 封装标识 U: TO-251 D: TO-252 包装方式 条管装 卷盘装 每管数量 80.
Features   Originative New Design   Superior Avalanche Rugged Technology   Robust Gate Oxide Technology   Very Low Intrinsic Capacitances   Excellent Switching Characteristics   Unrivalled Gate Charge: 5.5nC(Typ.)   Extended Safe Operating Area   Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V   100% Avalanche Tested   .

Document 2N60 datasheet pdf



logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy