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TK12E60U |
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| Part Number | TK12E60U |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60U，ITK12E60U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.4Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% ava... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.4Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 144 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL ... |
| Document |
 TK12E60U Data Sheet
PDF 241.31KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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