TK10A60W5 |
Part Number | TK10A60W5 |
Manufacturer | INCHANGE |
Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.45Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.45Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -... |
Document |
TK10A60W5 Data Sheet
PDF 248.78KB |
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