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| Part Number | TK10A60D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TK10A60D |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60D，ITK10A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op. |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drai. |
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Desde 2024. D4U Semiconductor.
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