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TK10A60W |
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| Part Number | TK10A60W |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60W, ITK10A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature ... |
| Document |
 TK10A60W Data Sheet
PDF 248.75KB |
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