IRFP250M |
Part Number | IRFP250M |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250M,IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot var... |
Features |
·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 214 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Chann... |
Document |
IRFP250M Data Sheet
PDF 237.09KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFP250 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFP250 |
Fairchild |
N-Channel Power MOSFET | |
3 | IRFP250 |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | IRFP250 |
Vishay |
Power MOSFET | |
5 | IRFP250 |
International Rectifier |
Power MOSFET | |
6 | IRFP250 |
IXYS |
Power MOSFET |