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IRF830A |
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| Part Number | IRF830A |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum L... |
| Features |
·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply ·Uninterruptable Power Supply ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous@ TC=25℃ 5 ID A Drain Current-continuous@ TC=100℃ 3.2 IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ ... |
| Document |
 IRF830A Data Sheet
PDF 229.61KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF830 |
NXP |
PowerMOS transistor |
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| 2 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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| 4 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 5 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 6 | IRF830 |
International Rectifier |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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