2SD1982 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD1982

INCHANGE
2SD1982
2SD1982 2SD1982
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Part Number 2SD1982
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance ...
Features lector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB= 24mA VBE(sat) -1 Base-Emitter Saturation Voltage IC= 4A; IB= 16mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=6A; IB= 24mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IB= 4A; VCE= 2V 300 300 5 2000 V V V 1.8 V 2.0 V 2.0 ...

Document Datasheet 2SD1982 Data Sheet
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