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2SD1890 |
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| Part Number | 2SD1890 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A ·Complement to Type 2SB1250 ... |
| Features |
ISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff current
VCE= 80V,IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Sw... |
| Document |
 2SD1890 Data Sheet
PDF 187.55KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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