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2SD1236 |
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| Part Number | 2SD1236 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
0.4
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
70
280
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 1A; VC... |
| Document |
 2SD1236 Data Sheet
PDF 200.50KB |
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Desde 2024. D4U Semiconductor.
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