2SD898 |
Part Number | 2SD898 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust ... |
Features |
e Breakdown Voltage
IE= 200mA; IC= 0
6.0
V
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
0.5 mA
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
5.0
V
1.5
V
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
36
VECF
C-E Diode Forward Voltage
IF= 3A
2.2
V
tf
Fall Time
IC= 2.75A, IB1= 0.6A , IB2= 1.3A
0.8 μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applic... |
Document |
2SD898 Data Sheet
PDF 210.60KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD892 |
Panasonic |
Si NPN Epitaxial Planar Transistor | |
2 | 2SD892A |
Panasonic |
Si NPN Epitaxial Planar Transistor | |
3 | 2SD893 |
Panasonic |
Si NPN Epitaxial Planar Transistor | |
4 | 2SD893A |
Panasonic |
Si NPN Epitaxial Planar Transistor | |
5 | 2SD894 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SD895 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |