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2SD862 |
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| Part Number | 2SD862 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Current-IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
RISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
hFE
DC Current Gain
IC= 100mA ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 12V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
20
V
20
... |
| Document |
 2SD862 Data Sheet
PDF 179.62KB |
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Desde 2024. D4U Semiconductor.
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