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2SD711 |
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| Part Number | 2SD711 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Low Collector Saturation Voltage ·Excellent Safe Operating Area ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
| Features |
GE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD711
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
500
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
500
V
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 0.3A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 0.3A
2.5
V
ICB... |
| Document |
 2SD711 Data Sheet
PDF 180.31KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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