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| Part Number | 2SD717 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD717 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3P(I) package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symb. |
| Features | ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=70V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=4V IE=0 ; VCB=10V ;f=1MHz 70 30 10 MIN 50 www.datasheet4u.com 2SD717 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 . |
| Part Number | 2SD717 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation : PC= 80W @TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power swi. |
| Features | S V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 70V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE -1 DC Current Gain IC= 1A ; VCE= 1V hFE -2 DC Current Gain IC= 6A ; VCE= 1V hFE-1 Classifications O . |
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|---|---|---|---|---|
| 1 | 2SD711 |
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| 2 | 2SD711 |
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| 3 | 2SD715 |
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| 4 | 2SD716 |
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| 5 | 2SD716 |
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| 6 | 2SD716 |
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| 7 | 2SD718 |
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| 8 | 2SD718 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD718 |
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NPN Transistor |
|
| 10 | 2SD718 |
Toshiba |
Silicon NPN Transistor |
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Desde 2024. D4U Semiconductor.
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