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2SD577 |
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| Part Number | 2SD577 |
| Manufacturer | INCHANGE |
| Description | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
itter Sustaining Voltage IC= 30mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 1A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
0.1 mA
hFE -1
DC Current Gain
IC= 1A; VCE= 5V
10
30
hFE -1
DC Current Gain
IC= 3A; VCE= 10V
7
fT
Current-Gain—Bandwidth Product
Switching Times
ts
Storage Time
tf
Fall Time
IC= 0.5A; VCE= 10V; ftest= 1MHz IC= 3A; IB1= IB2= 1.0A
5
MHz
8.0 μs 1.0 μs
NOTICE： ISC reserves the rights to... |
| Document |
 2SD577 Data Sheet
PDF 177.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD570 |
INCHANGE |
NPN Transistor |
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| 2 | 2SD5702 |
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| 3 | 2SD5703 |
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| 4 | 2SD571 |
NEC |
NPN Silicon Transistor |
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| 5 | 2SD575 |
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Triple Diffused Mesa Type Silicon Transistor |
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| 6 | 2SD5011 |
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Desde 2024. D4U Semiconductor.
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