2SD570 |
Part Number | 2SD570 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
Features |
A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= 0.1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
70
V
0.6
V
1.0
V
100 μA
100 μA
100
10
MHz
60
pF
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai... |
Document |
2SD570 Data Sheet
PDF 213.54KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD5702 |
Inchange |
Silicon NPN Power Transistors | |
2 | 2SD5703 |
Inchange Semiconductor |
Power Transistor | |
3 | 2SD571 |
NEC |
NPN Silicon Transistor | |
4 | 2SD575 |
ETC |
Triple Diffused Mesa Type Silicon Transistor | |
5 | 2SD577 |
INCHANGE |
NPN Transistor | |
6 | 2SD5011 |
Inchange Semiconductor |
Power Transistor |