2SD556 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD556

INCHANGE
2SD556
2SD556 2SD556
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Part Number 2SD556
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable...
Features r-Emitter Breakdown Voltage IC= 10mA ; IB= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A ; VCE= 4V VCB= 110V; IE= 0 VEB= 6V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 5A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V 1.0 V 1.5 V 0.1 mA 0.1 mA 60 200 30 120 8 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datashe...

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