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2SC5855 |
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| Part Number | 2SC5855 |
| Manufacturer | INCHANGE |
| Description | ·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflect... |
| Features |
ge IC=10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC=8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC=6A; VCE= 5V
hFE-3
DC Current Gain
IC=8A; VCE= 5V
MIN TYP. MAX UNIT
700
V
5
V
3
V
1.4
V
100 μA
28
60
6.2
10
4.3
6.7
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is... |
| Document |
 2SC5855 Data Sheet
PDF 184.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5850 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor |
|
| 2 | 2SC5851 |
Renesas Technology |
Silicon NPN Epitaxial Type Transistor |
|
| 3 | 2SC5852 |
Renesas Technology |
Silicon NPN epitaxial planar type Transistor |
|
| 4 | 2SC5855 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC5856 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 6 | 2SC5857 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 7 | 2SC5858 |
Toshiba Semiconductor |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 8 | 2SC5859 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|
| 9 | 2SC5800 |
Renesas |
NPN SILICON RF TRANSISTOR |
|
| 10 | 2SC5801 |
NEC |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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