2SC4799 |
Part Number | 2SC4799 |
Manufacturer | INCHANGE |
Description | ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
Features |
OL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
MIN TYP. MAX UNIT
80
V
2.0
V
1.5
V
100 μA
100 μA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products a... |
Document |
2SC4799 Data Sheet
PDF 182.17KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC4791 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4793 |
INCHANGE |
NPN Transistor | |
3 | 2SC4793 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
4 | 2SC4793 |
UTC |
NPN SILICON TRANSISTOR | |
5 | 2SC4793 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC4793AF |
NELL SEMICONDUCTOR |
High Frequency NPN Power Transistor |