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2SC1880 |
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| Part Number | 2SC1880 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
| Features |
ction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SC1880
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2A ,IB= 8mA
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 2V
MIN TYP. MAX UNIT
120
V
1.2
V
0.1 mA
2
mA
1000
NOTICE： ISC ... |
| Document |
 2SC1880 Data Sheet
PDF 182.45KB |
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Desde 2024. D4U Semiconductor.
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