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2SC1170 |
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| Part Number | 2SC1170 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplif... |
| Features |
ctor-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE-1
DC Current Gain
IC=0.5A; VCE= 10V
hFE-2
DC Current Gain
IC=2A; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
1.0
V
1.2
V
500
V
6
V
10
5
4
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equ... |
| Document |
 2SC1170 Data Sheet
PDF 173.09KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1170A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1172 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1172 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC1173 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC1173 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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