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2SC1173 |
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| Part Number | 2SC1173 |
| Manufacturer | SavantIC |
| Description | ·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Col. |
| Features | ase breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=0.5mA ;IE=0 IE=1mA ;IC=0 IC=2A IB=0.2A IC=0.5A ; VCE=2V VCB=20V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=0.5A ; VCE=2V 70 25 MIN 30 30 5 2SC1173 TYP. MAX UNIT V V V 0.8 1.0 1.0 1.0 240 V V µA µA 35 100 pF MHz u hFE-1 classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Spe. |
| Datasheet |
 2SC1173 Data Sheet
PDF 87.30KB |
| Distributor | Stock | Price | Buy |
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2SC1173 |
| Part Number | 2SC1173 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·Complement to Type 2SA473 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=. |
| Features | OL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.8 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 0.5A ; VCE= . |
2SC1173 |
| Part Number | 2SC1173 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : , SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC1 1 73 POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES • Good Linearity of hpg. Complementary to 2SA473 and 5 Watts Output Applications. 10-3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS CHARACTERIS. |
| Features |
• Good Linearity of hpg. Complementary to 2SA473 and 5 Watts Output Applications. 10-3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO v EBO ic IE RATING 30 30 5 3 -3 pc 10 Tj. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1170 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1170A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1172 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1172 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC1102 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1106 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC1106 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1108 |
SavantIC |
SILICON POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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