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2SB669 |
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| Part Number | 2SB669 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -2mA; IC= 0
V(BR)CBO Collector-Base breakdown voltage
IC=-1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -70V; IE= 0
ICEO
Collector Cutoff Current
VCE= -70V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE -1
DC Current Gain
IC= -1A ; VCE= -3V
hFE -2
DC Current ... |
| Document |
 2SB669 Data Sheet
PDF 181.26KB |
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