Busque con el número de pieza junto con el fabricante o la descripción
2SB608 |
Click to view a larger image
| Part Number | 2SB608 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -180V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -0.5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
tter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC=- 50mA; VCE=-4V
ICBO
Collector Cutoff Current
VCB= -180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -50mA ; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-180
V
-6
V
-1.0
V
-1.0
V
-100 μA
-10 μA
60
320
40
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time wi... |
| Document |
 2SB608 Data Sheet
PDF 180.53KB |
Desde 2024. D4U Semiconductor.
|