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2SB1550 |
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| Part Number | 2SB1550 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
Breakdown Voltage IC= -10mA; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA
-1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -5mA
-2.0
V
ICBO
Collector Cutoff Current
VCB= -80V; IE=0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-3
mA
hFE
DC Current Gain
IC= -5A; VCE= -3V
1000
20000
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
90
pF
fT
Current-Gain—Bandwidth Product IE= -0.5A; VCE= -5V
12
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification... |
| Document |
 2SB1550 Data Sheet
PDF 206.68KB |
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Desde 2024. D4U Semiconductor.
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