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2SB1284 |
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| Part Number | 2SB1284 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 1500(Min.)@IC= -5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA
-1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -10mA
-2.0
V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-100 μA
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
-100 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-5.0
mA
hFE
DC Current Gain
IC= -5A; VCE= -3V
1500
15000
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
20
MHz
Switching ... |
| Document |
 2SB1284 Data Sheet
PDF 205.27KB |
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Desde 2024. D4U Semiconductor.
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