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BU508DW |
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| Part Number | BU508DW |
| Manufacturer | INCHANGE |
| Description | ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ... |
| Features |
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 2A
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃
VEB= 5.0V; IC= 0
1.1
V
1.0 2.0
mA
1
mA
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
6
30
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V
7
MHz
VECF
C-E Diode Forward Voltage
IF= 4.5A
2.... |
| Document |
 BU508DW Data Sheet
PDF 210.03KB |
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Desde 2024. D4U Semiconductor.
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