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BDT61C |
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| Part Number | BDT61C |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ... |
| Features |
ERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
MAX UNIT 2.5 ℃/W 62.5 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistors
BDT61/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT61
60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT61A BDT61B
IC= 30mA; IB= 0
80 100
V
BDT61C
120
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
2.5
V
VBE(on) ICBO
Base-Emitt... |
| Document |
 BDT61C Data Sheet
PDF 211.37KB |
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