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BD900A |
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| Part Number | BD900A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complemen... |
| Features |
Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD900A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
-2.8
V
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -3V
-2.5
V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 100℃
-0.2 mA
-2.0
ICEO
Collector Cutoff Cu... |
| Document |
 BD900A Data Sheet
PDF 208.42KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BD900 |
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| 2 | BD900 |
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| 3 | BD900 |
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Desde 2024. D4U Semiconductor.
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