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BD899A |
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| Part Number | BD899A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement ... |
| Features |
nce,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD899A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 100℃
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE... |
| Document |
 BD899A Data Sheet
PDF 207.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD899 |
INCHANGE |
NPN Transistor |
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| 2 | BD899 |
Power Innovations Limited |
NPN Transistor |
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| 3 | BD899 |
Motorola |
Power Transistors |
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| 4 | BD899 |
SavantIC |
(BD895 - BD899) SILICON POWER TRANSISTOR |
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| 5 | BD899A |
Power Innovations Limited |
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| 6 | BD899A |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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