Part Number | BD899 |
Distributor | Stock | Price | Buy |
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Part Number | BD899 |
Manufacturer | Power Innovations Limited |
Title | NPN Transistor |
Description | BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD896, BD898, BD900 and BD902 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A . |
Features | the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power I. |
Part Number | BD899 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD900 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A. |
Features | e,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD899 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) Base-Emitter On Vol. |
Part Number | BD899 |
Manufacturer | Motorola |
Title | Power Transistors |
Description | www.DataSheet4U.com . |
Features | . |
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1 | BD890CS |
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2 | BD890CT |
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3 | BD890S |
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4 | BD890T |
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5 | BD890YS |
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6 | BD890YT |
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7 | BD8918F |
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8 | BD8918FV |
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9 | BD8919F |
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10 | BD8919FV |
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