Busque con el número de pieza junto con el fabricante o la descripción
2SD2557 |
Click to view a larger image
| Part Number | 2SD2557 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA
ICBO
Collector Cutoff current
VCB= 200V, IE= 0
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz IE= -0.5A; VCE= 10V
MIN TYP. MAX UNIT
200
V
1.5
V
0.1 mA
5.0 mA
1500
6500
110
pF
15
MHz
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of ou... |
| Document |
 2SD2557 Data Sheet
PDF 210.52KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2550 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2550 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2551 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2551 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2553 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2553 |
Toshiba Semiconductor |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|