2SD2551 |
Part Number | 2SD2551 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage- :VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
Features |
IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1700V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
2SD2551
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
1.0 mA
66
200 mA
8
28
5
10
2.0
V
3
MHz
125
pF
Notice: ISC reserves the righ... |
Document |
2SD2551 Data Sheet
PDF 209.88KB |
Similar Datasheet
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---|---|---|---|---|
1 | 2SD2550 |
INCHANGE |
NPN Transistor | |
2 | 2SD2550 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2551 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SD2553 |
INCHANGE |
NPN Transistor | |
5 | 2SD2553 |
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6 | 2SD2553 |
SavantIC |
SILICON POWER TRANSISTOR |