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2SD2155 |
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| Part Number | 2SD2155 |
| Manufacturer | INCHANGE |
| Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SB1429 ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
180
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 6A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 180V ; IE= 0
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
30
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
160
pF
fT
Current-Gain—Bandwidth Product
hFE-1 Classifications R O IC= 1A ; VCE= 5V 10 MHz 55-110 ... |
| Document |
 2SD2155 Data Sheet
PDF 197.47KB |
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Desde 2024. D4U Semiconductor.
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