2SD2104 |
Part Number | 2SD2104 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Minimum Lot-t... |
Features |
ified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
hFE
DC Current Gain
IC=... |
Document |
2SD2104 Data Sheet
PDF 194.10KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD2101 |
INCHANGE |
NPN Transistor | |
5 | 2SD2102 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SD2102 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |