2SD2083 INCHANGE NPN Transistor Datasheet. existencias, precio

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2SD2083

INCHANGE
2SD2083
2SD2083 2SD2083
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Part Number 2SD2083
Manufacturer INCHANGE
Description ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device...
Features PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.5 V ICBO Collector Cutoff current VCB= 120V, IE= 0 10 μA IEBO Emitter Cutoff current VEB= 6V, IC= 0 10 mA hFE DC Current Gain IC= 12A ; VCE= 4V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 340 pF fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 20 MHz Notice: ISC reserves the rights to make changes of the conte...

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