2SD2083 |
Part Number | 2SD2083 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device... |
Features |
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA
1.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
2.5
V
ICBO
Collector Cutoff current
VCB= 120V, IE= 0
10 μA
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
10 mA
hFE
DC Current Gain
IC= 12A ; VCE= 4V
2000
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
340
pF
fT
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
20
MHz
Notice: ISC reserves the rights to make changes of the conte... |
Document |
2SD2083 Data Sheet
PDF 199.07KB |
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